Diotec Unveils DIF170SIC049: A High-Voltage SiC MOSFET for Next-Gen Power Applications

 November 13th, 2025 |   By Area51 Electronics  |   0 Comments [Sassy_Social_Share]

As power electronics continue to evolve toward higher efficiency, greater reliability, and compact designs, Diotec Semiconductor steps forward with its latest innovation: the DIF170SIC049, a 1700V Silicon Carbide (SiC) MOSFET housed in a TO-247-4L package. This device is engineered to meet the rigorous demands of modern power conversion systems, offering a compelling combination of high voltage capability, low on-resistance, and fast switching performance. 

Key Features: 

  • 1700V drain-source voltage (VDSS) 
  • 49 mΩ maximum RDS(on) for reduced conduction losses 
  • Kelvin-source pin for improved switching performance 
  • Advanced planar SiC technology 
  • Low gate charge and switching energy 
  • Wide operating junction temperature range (-55°C to +175°C) 
  • Engineering samples available 

Designed for Efficiency and Reliability 

Diotec’s DIF170SIC049 is tailored for applications where efficiency and thermal performance are critical. Its low RDS(on) minimizes conduction losses, while the Kelvin-source configuration enables faster switching with reduced gate bounce and EMI. This makes it ideal for both soft- and hard-switching topologies, whether used in a flyback converter or a three-phase inverter. 

Moreover, the device’s high reverse breakdown voltage and robust thermal characteristics ensure long-term stability, even under demanding operating conditions. Designers can confidently integrate this MOSFET into systems requiring high voltage isolation, fast switching, and compact thermal management. 

Versatile Applications 

The DIF170SIC049 fits seamlessly into a wide range of power electronics applications, including: 

  • Electric vehicle (EV) charging systems 
  • Solar inverters 
  • Telecom power supplies 
  • Power Factor Correction (PFC) circuits 
  • Switched-mode power supplies (SMPS) 
  • DC/DC converters 
  • Industrial motor drives 
  • Heavy-duty machinery 

 

Technical Specifications 
Parameter  Value 
Drain-Source Voltage (VDSS)  1700 V 
On-State Resistance (RDS(on))  Max 49 mΩ 
Drain-Source Leakage Current (IDSS)  100 µA 
Gate-Source Voltage Range (VGSS)  -8 V to +22 V 
Recommended VGS(on)  +18 V 
Recommended VGS(off)  -4 V 
Power Dissipation (Ptot)  357 W 
Peak Drain Current (IDM)  150 A 
Thermal Resistance (RthC)  0.21 K/W 
Operating Junction Temp (Tj)  -55°C to +175°C 
Package  TO-247-4L 

  

Empowering the Future of Power Electronics 

With the DIF170SIC049, Diotec continues to push the boundaries of what’s possible in high-voltage power semiconductors. By leveraging the inherent advantages of SiC technology—including high thermal conductivity, low switching losses, and superior voltage handling—this MOSFET is poised to become a cornerstone in next-generation energy systems. 

Whether you’re designing for renewable energy, transportation, or industrial automation, Diotec’s DIF170SIC049 offers the performance and reliability needed to drive innovation forward. 

For more information, click here: 

https://area51esg.com/contact-us/ 

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